IRFD120PBF
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Краткое описание:
100V N-Channel MOSFET, 1.3A, 270mR, Through Hole DIP
Дополнительная информация
N-channel power MOSFET for general-purpose applications. Features 100V drain-source breakdown voltage and 1.3A continuous drain current. Offers a maximum drain-source on-resistance of 270mR. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a through-hole DIP format.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 1.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 360pF |
| Power Dissipation | 1.3W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Drain to Source Breakdown Voltage | 100V |
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