IRFD123PBF
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Краткое описание:
N-Channel MOSFET, 200V, 600mA, 270mR Rds(on), Through Hole
Дополнительная информация
N-channel power MOSFET with 100V drain-source voltage (Vdss) and 600mA continuous drain current (ID). Features low 270mΩ drain-source on-resistance (Rds On Max) and 1.5Ω drain to source resistance. Operates with a 20V gate-source voltage (Vgs) and a 2V threshold voltage. This through-hole component offers fast switching with 8.2ns turn-on delay and 14ns turn-off delay, and a 17ns fall time. Packaged in a 4-pin DIP for through-hole mounting, it supports a maximum power dissipation of 1.3W and operates from -55°C to 175°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Package/Case | DIP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 360pF |
| Power Dissipation | 1W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
| Drain to Source Breakdown Voltage | 200V |
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