IRFD210PBF
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Краткое описание:
N-Channel JFET, 200V, 600mA, 1.5R, DIP
Дополнительная информация
N-channel JFET transistor for general-purpose small signal applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 600mA. Offers a low drain-source on-resistance of 1.5 Ohms. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Packaged in a through-hole DIP with a 140pF input capacitance. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 140pF |
| Power Dissipation | 1W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 8.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
| Drain to Source Breakdown Voltage | 200V |
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