IRFD420PBF
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Краткое описание:
500V N-Channel MOSFET, 3R Rds(on), 370mA ID, DIP
Дополнительная информация
N-Channel Power MOSFET, featuring a 500V Drain to Source Breakdown Voltage and 3 Ohm Drain to Source Resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 370mA and a maximum power dissipation of 1W. Designed for through-hole mounting in a DIP package, it operates within a temperature range of -55°C to 150°C and boasts a threshold voltage of 4V. Key switching parameters include an 8.6ns fall time, 33ns turn-off delay, and 8ns turn-on delay, with an input capacitance of 360pF. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.197inch |
| Height | 0.133inch |
| Length | 0.247inch |
| Polarity | N-CHANNEL |
| Fall Time | 8.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 460mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 2500 |
| Input Capacitance | 360pF |
| Power Dissipation | 1W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 33ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 370mA |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
