IRFD9024PBF
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Краткое описание:
P-Channel MOSFET, 60V, 1.6A, 280mR, Through Hole DIP
Дополнительная информация
P-channel power MOSFET featuring 60V drain-source breakdown voltage and 1.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-source on-resistance and a -4V threshold voltage. Designed for through-hole mounting in a DIP package, it operates from -55°C to 175°C with a maximum power dissipation of 1.3W. Key switching characteristics include a 13ns turn-on delay and 15ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 68ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Package/Case | DIP |
| Polarization | P |
| Current Rating | -1.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 570pF |
| Power Dissipation | 1.3W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 280mR |
| Drain to Source Breakdown Voltage | 60V |
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