IRFD9120
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Краткое описание:
P-Channel MOSFET Transistor, -100V Vdss, 1A ID, DIP
Дополнительная информация
P-channel MOSFET transistor in a DIP package, featuring a continuous drain current of 1A and a drain-to-source voltage of -100V. Offers a maximum power dissipation of 1.3W with a drain-to-source resistance of 600mR at a nominal gate-to-source voltage of -4V. Operates across a temperature range of -55°C to 175°C, with turn-on delay time of 9.6ns and fall time of 29ns. Through-hole mountable with a width of 6.29mm, length of 5mm, and height of 3.37mm.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | P-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Nominal Vgs | -4V |
| Package/Case | DIP |
| RoHS Compliant | No |
| Package Quantity | 2500 |
| Input Capacitance | 390pF |
| Power Dissipation | 1.3W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | -100V |
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