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Краткое описание:
600V N-CH MOSFET 320mA 4.4R DIP Through Hole
Дополнительная информация
N-channel MOSFET with 600V drain-source breakdown voltage and 320mA continuous drain current. Features 4.4 Ohm drain-source on-resistance, 10V nominal gate-source voltage, and 4V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Packaged in a 4-pin DIP for through-hole mounting, this RoHS compliant component offers fast switching with turn-on delay time of 10ns and fall time of 23ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.197inch |
| Height | 0.133inch |
| Length | 0.247inch |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.4R |
| Nominal Vgs | 10V |
| Package/Case | DIP |
| Polarization | N |
| Current Rating | 320mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 2500 |
| Input Capacitance | 350pF |
| Power Dissipation | 1W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 320mA |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.4R |
| Drain to Source Breakdown Voltage | 600V |
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