IRFH5300TRPBF
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Краткое описание:
N-CH MOSFET 30V 40A PQFN EP SMT 8-Pin
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This single element transistor utilizes HEXFET process technology and is housed in an 8-pin PQFN EP surface-mount package with an exposed pad, measuring 5x6x0.81mm. Key electrical characteristics include a 1.4 mOhm maximum drain-source resistance at 10V and a typical gate charge of 120nC at 10V. Operating temperature range spans from -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | PQFN EP |
| AEC Qualified | No |
| Configuration | Single Quad Drain Triple Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 6 |
| Process Technology | HEXFET |
| Package Description | Plastic Quad Flat No Lead Package, Exposed Pad |
| Package Family Name | QFN |
| Package Height (mm) | 0.81 |
| Package Length (mm) | 5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.83 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 3600mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 120nC |
| Typical Gate Charge @ Vgs | 120@10V|[email protected]nC |
| Typical Output Capacitance | 1360pF |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Threshold Voltage | 2.35V |
| Maximum Drain Source Resistance | 1.4@10VmOhm |
| Typical Input Capacitance @ Vds | 7200@15VpF |
| Maximum Continuous Drain Current | 40A |
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