IRFH5303TR2PBF
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Краткое описание:
N-Channel MOSFET, 30V, 23A, 4.2mR, QFN, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 23A continuous drain current, and 4.2mΩ Rds(on) at a nominal 1.8V Vgs. This silicon, metal-oxide semiconductor FET features a 6mm x 5mm QFN package with a height of 0.81mm, suitable for surface mounting. It offers a maximum power dissipation of 3.6W and operates within a temperature range of -55°C to 150°C. Turn-on delay is 11ns, turn-off delay is 8.8ns, and fall time is 6.1ns, with an input capacitance of 2.19nF. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 0.81mm |
| Length | 5mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 6.1ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Nominal Vgs | 1.8V |
| Package/Case | QFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.19nF |
| Power Dissipation | 3.6W |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.8ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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