IRFH5303TRPBF
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Краткое описание:
N-CH MOSFET 30V 23A 6.8mR QFN EP T/R
Дополнительная информация
N-channel MOSFET transistor, surface mountable in a QFN EP package. Features 30V drain-to-source breakdown voltage and 23A continuous drain current. Offers low on-resistance with a maximum of 4.2mR at 10Vgs. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 3.6W. Includes fast switching characteristics with turn-on delay time of 11ns and fall time of 6.1ns. Packaged on tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 6.1ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | QFN EP |
| RoHS Compliant | Yes |
| Package Quantity | 4000 |
| Input Capacitance | 2.19nF |
| Power Dissipation | 3.6W |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 8.8ns |
| Max Power Dissipation | 3.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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