IRFH5304TR2PBF
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Краткое описание:
N-Channel MOSFET, 30V, 22A, 4.5mR, VQFN, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 22A Continuous Drain Current, and 4.5mΩ Rds On. Features a 6mm x 5mm VQFN package with a height of 0.81mm, suitable for surface mounting. Operates from -55°C to 150°C with a maximum power dissipation of 3.6W. Includes 1.65nF input capacitance and fast switching times with a 6.6ns fall time. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6mm |
| Height | 0.81mm |
| Length | 5mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 6.6ns |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Nominal Vgs | 2.35V |
| Package/Case | VQFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.65nF |
| Power Dissipation | 3.6W |
| Threshold Voltage | 2.35V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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