IRFH8324TR2PBF
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Краткое описание:
N-Channel MOSFET, 30V, 23A, 4.1mR, QFN, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Vds, 23A Continuous Drain Current (ID), and 4.1mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 1.17mm height, 5.85mm length, and 5mm width in a QFN package for surface mounting. With a maximum power dissipation of 54W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on delay of 13ns and fall time of 8.5ns. This component is RoHS compliant and HALOGEN FREE.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.17mm |
| Length | 5.85mm |
| Polarity | N-CHANNEL |
| Fall Time | 8.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Nominal Vgs | 1.8V |
| Package/Case | QFN |
| RoHS Compliant | Yes |
| Package Quantity | 400 |
| Input Capacitance | 2.38nF |
| Power Dissipation | 3.6W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 54W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.1MR |
| Drain to Source Breakdown Voltage | 30V |
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