IRFI634GPBF
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Краткое описание:
N-Channel MOSFET, 250V, 5.6A, 450mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 250V Vdss, 5.6A Continuous Drain Current, and 0.45 Ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 1-element configuration, and a maximum power dissipation of 35W. Operating temperature range is -55°C to 150°C, with a threshold voltage of 2V and input capacitance of 770pF. Turn-on delay is 9.6ns, fall time is 19ns, and turn-off delay is 42ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 770pF |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 250V |
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