IRFI840GPBF
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Краткое описание:
500V 4.6A N-Channel MOSFET TO-220AB
Дополнительная информация
N-Channel Power MOSFET, 500V Vds, 4.6A continuous drain current, and 850mΩ drain-source on-resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting, with a maximum power dissipation of 40W. Operating temperature range spans from -55°C to 150°C, with a threshold voltage of 4V and fast switching times including a 14ns turn-on delay. Isolation voltage is rated at 2.5kV, and the component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220-3 |
| Polarization | N |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 1.3nF |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 40W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 850mR |
| Drain to Source Breakdown Voltage | 500V |
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