IRFI9634GPBF
Производится
Увеличить
Краткое описание:
P-Channel MOSFET, 250V, 4.1A, 1R, TO-220
Дополнительная информация
P-channel MOSFET, 250V drain-source voltage, 4.1A continuous drain current, and 1 ohm drain-source on-resistance. Features a TO-220-3 package for through-hole mounting, with a maximum power dissipation of 35W. Operates across a temperature range of -55°C to 150°C, offering fast switching with turn-on delay of 12ns and fall time of 21ns. This silicon metal-oxide semiconductor FET is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | P-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1R |
| Nominal Vgs | -4V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 680pF |
| Power Dissipation | 35W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Voltage (Vdss) | -250V |
| Drain-source On Resistance-Max | 1R |
