IRFIBF30G
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Краткое описание:
900V N-Channel MOSFET, 1.9A, 3.7R, TO-220
Дополнительная информация
N-channel silicon power MOSFET with 900V drain-source voltage and 1.9A continuous drain current. Features 3.7 ohm drain-to-source resistance, 14ns turn-on delay, and 30ns fall time. This through-hole component is housed in a TO-220AB package, offering a maximum power dissipation of 35W and an operating temperature range of -55°C to 150°C.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 3.7R |
| Package/Case | TO-220-3 |
| Current Rating | 1.9A |
| RoHS Compliant | No |
| DC Rated Voltage | 900V |
| Package Quantity | 50 |
| Input Capacitance | 1.2nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 900V |
