IRFIZ14GPBF
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Краткое описание:
N-Channel MOSFET, 60V, 8A, 200mR Rds On, TO-220
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 8A continuous drain current. Offers a low 200mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 27W. Key switching characteristics include a 10ns turn-on delay and 19ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Nominal Vgs | 4V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 300pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 27W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
