IRFIZ48GPBF

IRFIZ48GPBF - Vishay(Siliconix)
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Краткое описание: N-Channel MOSFET, 60V, 37A, 18mR, TO-220

Дополнительная информация

N-channel power MOSFET featuring 60V drain-source voltage and 37A continuous drain current. Offers low 18mΩ drain-source on-resistance and 50W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, with a threshold voltage of 4V and a nominal gate-source voltage of 4V. Operates across a wide temperature range from -55°C to 175°C, with fast switching times including an 8.1ns turn-on delay. This RoHS compliant component is constructed with silicon metal-oxide semiconductor technology.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.8mm
Length 10.63mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 250ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 18mR
Nominal Vgs 4V
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 2.4nF
Threshold Voltage 4V
Number of Channels 1
Turn-On Delay Time 8.1ns
Radiation Hardening No
Turn-Off Delay Time 210ns
Reach SVHC Compliant Unknown
Max Power Dissipation 50W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 18mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 37A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 18mR

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