IRFL214TRPBF
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Краткое описание:
N-Channel JFET, 250V, 0.79A ID, 2R Rds(on), SOT-223
Дополнительная информация
N-channel Silicon Metal-oxide Semiconductor FET for surface mounting in a SOT-223 package. Features a continuous drain current of 790mA, a drain-source voltage of 250V, and a maximum drain-source on-resistance of 2 Ohms. Operates with a gate-source voltage up to 20V, exhibiting turn-on delay of 7ns and fall time of 7ns. Maximum power dissipation is 2W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.8mm |
| Length | 6.7mm |
| Weight | 0.008826oz |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Nominal Vgs | 2V |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 140pF |
| Power Dissipation | 2W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 790mA |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 2R |
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