IRFP4232PBF
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N-Channel MOSFET, 250V, 60A, 35.7mR Rds(on), TO-247AC
Дополнительная информация
N-Channel Power MOSFET, 250V Vds, 60A Continuous Drain Current, and 35.7mΩ Max Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-247AC package for through-hole mounting, offering a maximum power dissipation of 430W and an operating temperature range of -40°C to 175°C. Designed with a 5V nominal Vgs and 7.29nF input capacitance, this RoHS compliant component is ideal for high-power switching applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35.7mR |
| Nominal Vgs | 5V |
| Termination | Through Hole |
| Package/Case | TO-247AC |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 25 |
| Input Capacitance | 7.29nF |
| Power Dissipation | 430W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Dual Supply Voltage | 250V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 430W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 35.7MR |
| Drain to Source Breakdown Voltage | 250V |
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