IRFR110TRRPBF
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Краткое описание:
N-Channel MOSFET, 100V, 4.3A, 540mR, TO-252
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 4.3A Continuous Drain Current (ID). Features 540mΩ Drain-Source On-Resistance (Rds On) and 25W Max Power Dissipation. This silicon Metal-Oxide Semiconductor FET is housed in a TO-252-3 (DPAK-3) surface-mount package. Operates from -55°C to 150°C with a 20V Gate-Source Voltage (Vgs) rating. RoHS compliant and supplied in tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 540mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 180pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 6.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 100V |
