IRFR120PBF
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Краткое описание:
N-Channel MOSFET, 100V, 7.7A, 270mR, DPAK, Surface Mount
Дополнительная информация
N-channel power MOSFET, 100V drain-source voltage, 7.7A continuous drain current, and 270mΩ maximum drain-source on-resistance. Features include a 4V nominal gate-source threshold voltage, 17ns fall time, and 6.8ns turn-on delay. This silicon, metal-oxide semiconductor FET is housed in a DPAK surface-mount package, offering a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Current | 77A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 360pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.8ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 18ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
