IRFR120ZPBF
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Краткое описание:
N-Channel MOSFET, 100V, 8.7A, 190mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, DPAK package, featuring 100V drain-source breakdown voltage and 8.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.19-ohm drain-source on-resistance and 35W maximum power dissipation. Ideal for surface mount applications, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 8.3ns turn-on delay and 23ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 8.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 75 |
| Input Capacitance | 310pF |
| Power Dissipation | 35W |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.3ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 190MR |
| Drain to Source Breakdown Voltage | 100V |
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