IRFR220TRPBF
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Краткое описание:
N-Channel MOSFET, 200V, 4.8A, 800mR, DPAK, Power
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source voltage and 4.8A continuous drain current. Offers a low 800mΩ drain-source on-resistance. Designed for surface mounting in a DPAK package, this component boasts fast switching times with a turn-on delay of 7.2ns and fall time of 13ns. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 260pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
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