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N-Channel Power MOSFET, 200V, 4.8A, 800mR, TO-252
Дополнительная информация
N-channel power MOSFET, TO-252 package, offering 200V drain-source voltage and 4.8A continuous drain current. Features 800mΩ drain-source resistance, 20V gate-source voltage, and 2.5W maximum power dissipation. This surface-mount component boasts fast switching times with a 7.2ns turn-on delay and 13ns fall time, and operates within a -55°C to 150°C temperature range. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 260pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 200V |
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