IRFR224TRPBF
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Краткое описание:
N-Channel MOSFET, 250V, 3.8A, 1.1Ω, TO-252
Дополнительная информация
N-Channel Power MOSFET, 250V Vdss, 3.8A Continuous Drain Current (ID), and 1.1 Ohm Rds On Max. This silicon Metal-oxide Semiconductor FET features a TO-252-3 (DPAK-3) surface mount package, ideal for applications requiring efficient switching. Key electrical characteristics include a 4V threshold voltage, 260pF input capacitance, and fast switching times with a 7ns turn-on delay and 12ns fall time. Operating across a wide temperature range from -55°C to 150°C, this component offers a maximum power dissipation of 2.5W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.1R |
| Nominal Vgs | 2V |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 260pF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.1R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 1.1R |
