IRFR320PBF
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Краткое описание:
N-Channel MOSFET, 400V, 3.1A, 1.8R, DPAK
Дополнительная информация
N-Channel Power MOSFET, DPAK package, featuring 400V drain-source voltage (Vdss) and 3.1A continuous drain current (ID). This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 1.8 Ohms (Rds On Max). Designed for surface mounting, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 10ns turn-on delay and a 13ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.8R |
| Package/Case | DPAK |
| Current Rating | 3.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 75 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 1.8R |
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