IRFR4510TRPBF
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Краткое описание:
N-CH Power MOSFET 100V 63A DPAK TO-252 Si HEXFET
Дополнительная информация
N-channel Power MOSFET, HEXFET technology, 100V drain-source voltage, 63A continuous drain current. Surface mount DPAK (TO-252AA) package, 3-pin configuration with tab. Features low on-resistance of 13.9 mOhm at 10V Vgs, 54nC gate charge, and 3031pF input capacitance. Maximum power dissipation of 143W, operating temperature range of -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Package Width (mm) | 6.22(Max) |
| Process Technology | HEXFET |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.39(Max) |
| Package Length (mm) | 6.73(Max) |
| Seated Plane Height (mm) | 2.52(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 143000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 54nC |
| Typical Gate Charge @ Vgs | 54@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 13.9@10VmOhm |
| Typical Input Capacitance @ Vds | 3031@50VpF |
| Maximum Continuous Drain Current | 63A |
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