IRFR9214TRPBF
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Краткое описание:
P-Channel MOSFET, 250V, 2.7A, 3R RdsOn, DPAK
Дополнительная информация
P-channel power MOSFET, 250V drain-source voltage, 2.7A continuous drain current, and 3 Ohm drain-source on-resistance. Features include a 20V gate-source voltage, 50W power dissipation, and a DPAK surface-mount package. This silicon metal-oxide semiconductor FET offers fast switching with turn-on delay of 11ns and fall time of 17ns. Operating temperature range is -55°C to 150°C, with RoHS compliance and tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 220pF |
| Power Dissipation | 50W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 3R |
