IRFR9220TR
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Краткое описание:
P-Channel MOSFET, 200V, 3.6A, 1.5R, TO-252
Дополнительная информация
P-channel power MOSFET with 200V drain-source voltage and 3.6A continuous drain current. Features 1.5 Ohm drain-source on-resistance and 42W maximum power dissipation. This silicon metal-oxide semiconductor FET is housed in a TO-252 DPAK-3 surface-mount package, ideal for tape and reel applications. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | P-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | TO-252-3 |
| Current Rating | -3.6A |
| RoHS Compliant | No |
| DC Rated Voltage | -200V |
| Package Quantity | 2000 |
| Input Capacitance | 340pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.8ns |
| Turn-Off Delay Time | 7.3ns |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.5R |
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