IRFSL9N60APBF
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Краткое описание:
600V 9.2A N-Channel MOSFET TO-262-3 750mR Rds(on)
Дополнительная информация
N-Channel Power MOSFET, 600V Vdss, 9.2A continuous drain current, and 0.75ohm Rds On Max. Features a 4V threshold voltage, 13ns turn-on delay, and 30ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-262-3 package with through-hole mounting. Maximum power dissipation is 170W, with an operating temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.65mm |
| Length | 10.67mm |
| Weight | 0.084199oz |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.4nF |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 170W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 750mR |
