IRFU110PBF
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N-Channel MOSFET, 100V, 4.3A, 540mR, TO-251
Дополнительная информация
N-Channel Power MOSFET, TO-251 package, featuring 100V drain-source voltage and 4.3A continuous drain current. Offers a maximum drain-source on-resistance of 540mΩ. Operates with a 4V threshold voltage and 20V gate-source voltage, with typical switching times including a 6.9ns turn-on delay and 9.4ns fall time. Maximum power dissipation is 25W, with a maximum operating temperature of 150°C. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.38mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 9.4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 540mR |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 180pF |
| Power Dissipation | 25W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
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