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Краткое описание:
N-Channel MOSFET, 200V, 2.6A, 1.5R, TO-251
Дополнительная информация
N-Channel Power MOSFET, featuring 200V Drain-to-Source Voltage (Vdss) and 2.6A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 1.5 ohm Drain-to-Source Resistance (Rds On Max). Designed for through-hole mounting in a TO-251 IPAK-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8.2ns turn-on delay and an 8.9ns fall time.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Width | 2.38mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 8.9ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Package/Case | TO-251-3 |
| Current Rating | 2.6A |
| RoHS Compliant | No |
| DC Rated Voltage | 200V |
| Package Quantity | 75 |
| Input Capacitance | 140pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.2ns |
| Turn-Off Delay Time | 14ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 200V |
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