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Краткое описание:
MOSFET N-CH 400V 3.1A 1.8R TO-251AA
Дополнительная информация
N-channel MOSFET transistor for through-hole mounting. Features a 400V drain-source breakdown voltage and a continuous drain current of 3.1A. Offers a low drain-source on-resistance of 1.8 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in TO-251AA (IPAK) with a maximum power dissipation of 2.5W. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.38mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.8R |
| Package/Case | TO-251AA |
| Polarization | N |
| Current Rating | 3.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 3000 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 1.8R |
| Drain to Source Breakdown Voltage | 400V |
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