IRFU3709ZPBF
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N-Channel MOSFET, 30V, 86A, 6.5mR, TO-251
Дополнительная информация
N-CHANNEL MOSFET for high-current applications. Features 30V drain-source breakdown voltage and 86A continuous drain current. Offers low on-resistance of 6.5mR at 10V, with a maximum power dissipation of 79W. Packaged in a TO-251-3 through-hole mount, this RoHS compliant component operates from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 0.094inch |
| Height | 6.22mm |
| Length | 6.73mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 3.9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6.5mR |
| Nominal Vgs | 1.8V |
| Package/Case | TO-251-3 |
| Current Rating | 86A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 75 |
| Input Capacitance | 2.33nF |
| Power Dissipation | 79W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 86A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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