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Краткое описание:
N-CH MOSFET 55V 62A 11mR TO-251
Дополнительная информация
N-channel MOSFET featuring 55V drain-source breakdown voltage and 62A continuous drain current. Offers a low 11mOhm maximum drain-source on-resistance and 40nC gate charge. Designed for through-hole mounting in a TO-251-3 package, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 91W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.3mm |
| Height | 6.1mm |
| Length | 6.6mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Lead Pitch | 2.28mm |
| Rds On Max | 11mR |
| Lead Length | 9.65mm |
| Package/Case | TO-251-3 |
| Current Rating | 42A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 75 |
| Input Capacitance | 1.72nF |
| Power Dissipation | 91W |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 91W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 11MR |
| Drain to Source Breakdown Voltage | 55V |
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