IRFU9020PBF
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Краткое описание:
P-CH MOSFET 50V 9.9A 280mR TO-251 IPAK
Дополнительная информация
P-channel MOSFET transistor featuring 50V drain-source voltage and 9.9A continuous drain current. This through-hole mounted component offers a low 280mΩ drain-source resistance and operates with a nominal gate-source voltage of -4V. It boasts fast switching characteristics with turn-on delay time of 8.2ns and fall time of 25ns. Encased in a TO-251-3 (IPAK) package, this lead-free and RoHS compliant semiconductor is rated for a maximum power dissipation of 42W and a maximum operating temperature of 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | -4V |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 490pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8.2ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Voltage (Vdss) | 50V |
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