IRFU9120PBF
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Краткое описание:
P-CH MOSFET 100V 5.6A TO-251
Дополнительная информация
P-channel Power MOSFET with 100V drain-source breakdown voltage and 5.6A continuous drain current. Features low 480mR drain-source on-resistance at Vgs=10V, 10V threshold voltage, and 20V maximum gate-source voltage. This TO-251AA packaged transistor offers 42W maximum power dissipation and is suitable for through-hole mounting. Includes fast switching speeds with turn-on delay of 9.6ns and fall time of 31ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | P-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Lead Length | 9.65mm |
| Package/Case | TO-251AA |
| Polarization | P |
| Current Rating | -5.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 3000 |
| Input Capacitance | 390pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 600mR |
| Drain to Source Breakdown Voltage | -100V |
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