IRFU9210PBF
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Краткое описание:
P-CH MOSFET 200V 1.9A 3R TO-251
Дополнительная информация
P-Channel Power MOSFET featuring a 200V Drain-Source Breakdown Voltage and 1.9A Continuous Drain Current. This through-hole component offers a low 3 Ohm Drain-Source On-Resistance and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns turn-on delay and a 13ns fall time, with an input capacitance of 170pF. Packaged in TO-251-3 (IPAK) with a 2.5W power dissipation, this RoHS compliant device is suitable for various power switching applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.38mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | P-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3R |
| Package/Case | TO-251-3 |
| Current Rating | -1.9A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 170pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | -200V |
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