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Краткое описание:
600V 2A N-CH MOSFET TO-251 4.4R
Дополнительная информация
N-channel power MOSFET with 600V drain-source voltage and 2A continuous drain current. Features 4.4 ohm drain-source on-resistance and 2.5W maximum power dissipation. Operates from -55°C to 150°C with a 4V threshold voltage. Packaged in a TO-251AA (IPAK-3) through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 10ns and fall time of 25ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.39mm |
| Height | 6.22mm |
| Length | 6.73mm |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.4R |
| Package/Case | TO-251AA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.4R |
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