IRFZ14SPBF
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Краткое описание:
60V 10A N-Channel MOSFET, 200mR Rds On, D2PAK
Дополнительная информация
N-Channel Power MOSFET, 60V Vdss, 10A Continuous Drain Current, 200mΩ Rds On. This single-element silicon Metal-oxide Semiconductor FET features a TO-263AB package for surface mounting. With a maximum power dissipation of 3.7W and operating temperatures from -55°C to 175°C, it offers fast switching with turn-on delay of 10ns and fall time of 19ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 300pF |
| Power Dissipation | 3.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 60V |
