IRFZ40PBF

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IRFZ40PBF - Vishay(Siliconix)
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Краткое описание: MOSFET N-CH 60V 35A 28mR TO-220AB
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, designed for through-hole mounting in a TO-220AB package. Features a maximum continuous drain current of 35A and a drain-to-source voltage of 60V. Offers a low on-resistance of 28mR at a nominal gate-source voltage of 4V. This component boasts fast switching speeds with turn-on delay time of 15ns and fall time of 12ns. Maximum power dissipation is rated at 150W, with operating temperatures ranging from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 9.01mm
Length 10.41mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 28mR
Nominal Vgs 4V
Package/Case TO-220AB
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 1.9nF
Power Dissipation 126W
Threshold Voltage 4V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant Unknown
Max Power Dissipation 150W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 28mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 60V

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