IRFZ48ZSPBF
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Краткое описание:
N-Channel MOSFET, 55V, 61A, 11mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 55V Drain-Source Breakdown Voltage, 61A Continuous Drain Current, and 11mΩ Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 91W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 35ns turn-off delay, with a 39ns fall time. Input capacitance is 1.72nF, and it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 11mR |
| Package/Case | D2PAK |
| Current Rating | 61A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 50 |
| Input Capacitance | 1.72nF |
| Power Dissipation | 91W |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 91W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 11MR |
| Drain to Source Breakdown Voltage | 55V |
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