IRG4PH50KDPBF

IRG4PH50KDPBF - International Rectifier
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Краткое описание: 1200V 45A N-Ch IGBT TO-247AC

Дополнительная информация

N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous Collector Current (I(C)) rating of 45A. This IGBT offers a maximum Collector-Emitter Saturation Voltage of 2.77V and a maximum power dissipation of 200W. Packaged in a TO-247AC through-hole plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.3mm
Height 20.3mm
Length 15.9mm
Lead Free Lead Free
Packaging Bulk
Input Type STANDARD
Package/Case TO-247AC
Current Rating 45A
RoHS Compliant Yes
DC Rated Voltage 1.2kV
Package Quantity 25
Turn-On Delay Time 87ns
Turn-Off Delay Time 140ns
Reach SVHC Compliant No
Max Collector Current 45A
Max Power Dissipation 200W
Reverse Recovery Time 90ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 3.5V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.77V

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