IRGSL4B60KD1PBF
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Краткое описание:
IGBT 600V 11A TO-262 Through Hole
Дополнительная информация
The IRGSL4B60KD1PBF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 11A. It is packaged in a TO-262 case and is designed for through-hole mounting. The device has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 63W. It is compliant with RoHS regulations and is available in a package quantity of 50.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 11.3mm |
| Length | 10.67mm |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-262 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Max Collector Current | 11A |
| Max Power Dissipation | 63W |
| Reverse Recovery Time | 93ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
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