IRL510SPBF
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Краткое описание:
N-Channel MOSFET, 100V, 5.6A, 540mR Rds(on), D2PAK
Дополнительная информация
N-Channel Power MOSFET, 100V Drain-Source Voltage, 5.6A Continuous Drain Current, and 0.54ohm Drain-Source Resistance. Features include a 10V Gate-Source Voltage, 18ns Fall Time, 16ns Turn-Off Delay, and 9.3ns Turn-On Delay. This silicon Metal-Oxide Semiconductor FET is designed for surface mounting in a D2PAK package, offering a maximum power dissipation of 43W and operating temperature range of -55°C to 175°C. It is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.02mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 540mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 250pF |
| Power Dissipation | 3.7W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Max Power Dissipation | 43W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Voltage (Vdss) | 100V |
