IRL640A
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N-Channel MOSFET, 200V, 18A, 180mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring a 200V drain-source breakdown voltage and 18A continuous drain current. This logic-level MOSFET offers a low 180mΩ drain-source on-resistance at a nominal gate-source voltage of 2V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns fall time, 11ns turn-on delay, and 46ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 16.3mm |
| Length | 10.67mm |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Nominal Vgs | 2V |
| Package/Case | TO-220AB |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 50 |
| Input Capacitance | 1.705nF |
| Power Dissipation | 110W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Drain to Source Breakdown Voltage | 200V |
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