IRL7833STRRPBF
Снят с производства
Увеличить
Краткое описание:
N-Channel MOSFET, 30V, 150A, 3.8mR Rds On, D2PAK
Дополнительная информация
N-channel power MOSFET, D2PAK package, 30V drain-source breakdown voltage, 150A continuous drain current, and 3.8mΩ drain-source on-resistance. Features include 6.9ns fall time, 18ns turn-on delay, and 21ns turn-off delay. Operates from -55°C to 175°C with a maximum power dissipation of 140W. This surface-mount component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 6.9ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.8mR |
| Nominal Vgs | 2.3V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 4.17nF |
| Power Dissipation | 140W |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.8MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
