IRLD120
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Краткое описание:
N-Channel MOSFET, 100V, 1.3A, 270mR, DIP, Through Hole
Дополнительная информация
N-Channel Power Field-Effect Transistor, 100V Drain-Source Voltage, 1.3A Continuous Drain Current, and 270mΩ Max Drain-Source On Resistance. This silicon Metal-oxide Semiconductor FET features a 1-element configuration, 10V Gate-to-Source Voltage, and 490pF Input Capacitance. Designed for through-hole mounting in a DIP package, it offers a maximum power dissipation of 1.3W and operates within a temperature range of -55°C to 175°C. Switching characteristics include a 9.8ns turn-on delay and 64ns fall time.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 6.29mm |
| Height | 3.37mm |
| Length | 5mm |
| Polarity | N-CHANNEL |
| Fall Time | 64ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 270mR |
| Package/Case | DIP |
| Current Rating | 1.3A |
| RoHS Compliant | No |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 490pF |
| Power Dissipation | 1.3W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
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