IRLH6224TR2PBF
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Краткое описание:
N-Channel MOSFET, 20V, 28A, 3mR Rds(on), TSOP, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, designed for surface mount applications in a TSOP package. Features a 20V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 28A. Offers a low drain-source on-resistance of 3mR at a nominal gate-source voltage (Vgs) of 800mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.6W. Includes fast switching characteristics with a turn-on delay time of 9.4ns and a fall time of 36ns. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Nominal Vgs | 800mV |
| Package/Case | TSOP |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.71nF |
| Power Dissipation | 3.6W |
| Threshold Voltage | 800mV |
| Turn-On Delay Time | 9.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 67ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 20V |
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